概要

The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band (17.5GHz to 21.5GHz) SATCOM, Weather Radar, Test and Measurement and other phased array applications. The core IC has 6-bit phase control coupled with up to 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 16dB nominal gain and -30dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation.

The chip operates at 2.1V to 2.5V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-state loading and fast four on-chip beam storage. The module has four external bias pins (5-bit DACs) to control external LNA’s, temperature reporting and external biasing.

F6102 - Block Diagram
F6102 - Block Diagram
  • 17.5GHz to 21.5GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time
  • 3° typical RMS phase error
  • 0.3dB typical RMS gain error
  • 30dB gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory

ドキュメント

= ピックアップ
分類 タイトル 日時
データシート－簡略版
F6102 Advance Short-Form Datasheet
PDF 239 KB
1 item

設計・開発

ソフトウェアダウンロード
分類 タイトル 日時
ソフトウェア／ツール－評価版ソフトウェア
F61xx/F62xx Evaluation Kit Software and Drivers
ログインしてダウンロード ZIP 4.75 MB
1 item

ECADモデル

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ECADモデルを調べる
Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Lead Count (#)
    Temp. Grade
    Carrier Type
    ご購入 / サンプル
    型名
    F6102NTGK
    circle新規採用非推奨品
    memory
    view_in_ar
    サンプル入手可能
    		 VFQFPN 40 K Tray サンプルを入手,
    F6102NTGK8
    circle新規採用非推奨品
    memory
    view_in_ar
    		VFQFPN 40 K Reel
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    ニュース＆ブログ

    IDT、アクティブアンテナシステム分野での成長を加速する マイクロ波／ミリ波製品を発表 ニュース 2017年9月26日