The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.


  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
  • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
  • Internal 4.5V regulated gate drive voltage
  • Independent outputs for adjustable turn-on/turn-off speeds
  • Full military temperature range operation
  • TA = -55°C to +125°C
  • TJ = -55°C to +150°C
  • Radiation hardness assurance (wafer-by-wafer)
  • High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
  • Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
  • No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
  • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-17233

Product Options

Part Number Part Status Pkg. Type Carrier Type MOQ DLA SMD Buy Sample
Active CLCC Tray 1
Active CLCC Tray 1 5962L1723302VXC
Active 100 5962L1723302V9A
Active Die Waffle Pack 1 5962L1723302V9A


Title language Type Format File Size Date
Datasheets & Errata
ISL70040SEH, ISL73040SEH Datasheet Datasheet PDF 1.19 MB
User Guides & Manuals
ISL73040SEHEV4Z User Guide Manual PDF 1.11 MB
Application Notes & White Papers
AN9867: End of Life Derating: A Necessity or Overkill Application Note PDF 338 KB
Wafer by Wafer Low Dose Rate Acceptance White Paper White Paper PDF 533 KB
PCN18008 - Part Marking Change for the Listed QML Products Product Change Notice PDF 846 KB
Intersil Space Products Brochure Brochure PDF 3.14 MB
Intersil Commercial Lab Services Brochure PDF 364 KB
Standard Microcircuit Drawing 5962-17233 (ISL70040SEH, ISL73040SEH) Other 0 KB
PA18030 - Correction to the ISL70040SEH and ISL73040SEH datasheet for Standard Microcircuit Drawing (SMD) 5962-1723301 and 5962-1723302 Product Advisory PDF 356 KB
ISL73040SEH Total Dose Test Report Report PDF 349 KB
ISL70040SEH Total Dose Test Report Report PDF 426 KB
ISL70040SEH, ISL73040SEH SEE Test Report Report PDF 251 KB


Title language Type Format File Size Date
ISL70040SEH Steady State iSim Model Model SXSCH 104 KB
ISL70040SEH, ISL73040SEH PSPICE Model Model ZIP 13 KB

Boards & Kits

Part Number Title Type Company
ISL73040SEHEV4Z Radiation Hardened Low-Side GaN FET Driver and GaN FET Evaluation Board Evaluation Renesas

News & Additional Resources

Type Date Sort ascending
Low Dose Rate Acceptance Testing Page Mar 25, 2020
Standard Data Package Page Mar 19, 2020
Rad Hard SMD Test Flow Page Mar 19, 2020
Rad Hard Test Reports Page Mar 19, 2020