The HM-6617/883 is a 16, 384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0. 600 inch wide 24 pin SBDIP, the 0. 300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617/883 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined with the Renesas advanced self-aligned silicon gate CMOS process technology offers ultra-low standby current. Low ICCSB is ideal for battery applications or other systems with low power requirements. The Renesas NiCr fuse link technology is utilized on this and other Renesas CMOS PROMs. This gives the user a PROM with permanent, stable storage characteristics over the full industrial and military temperature voltage ranges. NiCr fuse technology combined with the low power characteristics of CMOS provides an excellent alternative to standard bipolar PROMs or NMOS EPROMs. All bits are manufactured storing a logical "0" and can be selectively programmed for a logical "1" at any bit location.
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|PDF 4.85 MB||Brochure|
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PCN11042 - Manufacturing Site Change for Assembly of Intersil Ceramic Solder Seal Packaged Products - Amkor (ATP) Muntinlupa City, Philippines and Intersil (ISP) Palm Bay, FLPDF 138 KB
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|PDF 338 KB||Application Note|
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