Overview

Description

The F1431BEVB is a fully-populated evaluation board which allows the customer to easily evaluate the F1431B differential input amplifier. Component placement of the output matching components C5, L1, and C6 is critical and these components should be placed as close to pin 1 of the F1431B as possible. Renesas recommends the customer seek guidance for board layout. PCB Gerber files upon request.

Features

  • SMA connectors for RF input and RF output
  • On-board balun support single-ended RF connection
  • On-board jumper to support High / Middle or Low-band
  • Flexible configuration and performance optimization

Applications

Documentation

Type Title Date
Datasheet Log in to Download PDF 2.82 MB
1 item

Design & Development

Software & Tools

Software Downloads

Type Title Date
Software & Tools - Software Log in to Download ZIP 169.81 MB
1 item
IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.