Overview

Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Features

  • –1.8V drive available
  • Low on-state resistance
    RDS(on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
    RDS(on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
    RDS(on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
  • Built-in gate protection diode
  • Lead-free and Halogen-free
  • Comparison

    Applications

    Documentation

    Type Title Date
    Application Note PDF 648 KB 日本語
    Datasheet PDF 261 KB
    2 items

    Design & Development

    Models