Overview

Description

The N0608N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A )
  • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V )
  • High current : ID(DC) = ±52A
  • RoHS Compliant
  • Quality Grade : Standard
  • Applications : For high current switching

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 671 KB
Brochure PDF 5.51 MB 日本語
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
4 items

Design & Development

Models

Support