Overview

Description

The N0608N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A )
  • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V )
  • High current : ID(DC) = ±52A
  • RoHS Compliant
  • Quality Grade : Standard
  • Applications : For high current switching

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 671 KB
Brochure PDF 8.73 MB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
4 items

Design & Development

Models