Overview

Description

The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2. 5 V drive switching applications.

Features

  • 2.5 V drive available
  • Super low on-state resistance
    RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
    RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
Datasheet PDF 225 KB
3 items

Design & Development

Models