The RJP1CS27DWA is a 1250V, 150A, trench insulated-gate bipolar transistor (IGBT) with a low collector to emitter saturation voltage. It is available in an Unsawn wafer package type.
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Pkg. Type |
Carrier Type |
Buy / Sample |
|
---|---|---|---|
Part Number | |||
Wafer |