Overview

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

  • Low on-resistance
    RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
  • Low leakage current
  • High speed switching

    • Documentation
    Type Title Date
    Application Note
    Attention of Handling Semiconductor Devices
    PDF 648 KB 日本語
    Datasheet
    RJK6024DP3-A0 Data Sheet (600 V - 0.4 A - MOS FET / High Speed Power Switching)
    PDF 170 KB
    2 items