Overview

Description

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The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low input capacitance Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 220 KB
Guide PDF 1.71 MB
Product Reliability Report PDF 221 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models