Overview

Description

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The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
  • High current rating ID(DC) = ±110 A

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 284 KB
Guide PDF 1.71 MB
Product Reliability Report PDF 227 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models