Overview

The KGF16N05D is a dual 5.5V, 1.9mΩ, chip-scale, N-channel power MOSFET. The device uses technology that uniquely integrates low-cost CMOS and WLCSP fabrication processes. The chip scale package offers a small area, with a low vertical profile, and is fully compatible with standard SMT assembly processes. The KGF16N05D device offers unprecedented low ON-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other power management systems.

  • Industry-leading figures of merit:
    rDS(ON) × Qg and rDS(ON) × Qgd
  • Low profile/small footprint chip scale WLCSP package
  • High-frequency switching
  • Known Good FET (KGF) Quality Assurance Process
  • Low thermal resistance

Applications

  • Point-of-load DC/DC converters
  • Portable electronics
  • OR'ing diodes

Documentation

= Featured Documentation
Type Title Date
Datasheet
KGF16N05D Datasheet
PDF 443 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
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