Overview

This HAF2012S Silicon N-Channel MOSFET has the over-temperature shut-down capability sensing to the junction temperature. This FET has a built-in over-temperature shut-down circuit in the gate area. It also provides the circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current, etc.

  • Logic level operation (4V to 6V gate drive)
  • High endurance capability against the short circuit
  • Built-in the over-temperature shut-down circuit
  • Latch type shut-down operation (Needs 0 voltage recovery)

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Product Options

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    Pkg. Type
    Standard Pkg. Type
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    Part Number
    HAF2012S
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    		LDPAK(S)(1) TO-263 / D2PAK
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