Overview

Description

The RJH65S04DPQ-A0 is a 650V 100A Single Insulated-Gate Bipolar Transistor (IGBT) for inverter applications.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High-Speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Tj = 125°C, inductive load)

Comparison

Applications

Documentation

Design & Development

Models