UPA2820T1S

Nch Single Power MOSFET 30V 22A 5.3mohm HWSON-8

Support for high-efficiency drive and low heat design

OVERVIEW

The μPA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.

KEY FEATURES

    • VDSS = 30 V (TA = 25°C)
    • Low on-state resistance
      RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 22 A)
    • 4.5 V Gate-drive available
    • Small & thin type surface mount package with heat spreader (HWSON-8)
    • Pb-free, Halogen Free

PARAMETRICS

Parameters
UPA2820T1S
Basic Information
Production Status
Mass Production
PLP
-
Package Type
HWSON-8
Nch/Pch
Nch
Number of Channels
Single
VDSS (V) max.
30
ID (A)
22
RDS (ON) (mohm) max. @4V or 4.5V
14
RDS (ON) (mohm) max. @10V or 8V
5.3
Ciss (pF) typ.
2330
Vgs (off) (V) max.
2.5
VGSS (V)
20
Pch (W)
16
Application
Industrial, Consumer Use
Mounting Type
Surface Mount
QG (nC) typ.
50

You can find an explanation of orderable part numbers here.

 

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