The 3803L Group is supported only for the customers who have already adopted any of the products. For new adoption, please consider other products such as RL78/G13, RL78/G14 Group.

Main Solutions

Key Features:

Mask Rom Version/ Flash Memory Version]

  • Basic machine-language instructions: 71
  • Minimum instruction execution time: 0.24 μs (at 16.8 MHz oscillationfrequency)
  • Memory size
    • ROM: 16 K to 60 K bytes
    • RAM: 640 to 2048 bytes
  • Programmable input/output ports: 56
  • Software pull-up resistors: Built-in
  • Interrupts: 21 sources, 16 vectors (external 8, internal 12, software1)
  • Timers: 16-bit × 1, 8-bit × 4 (with 8-bit prescaler)
  • Watchdog timer: 16-bit × 1
  • Serial Interface: 8-bit × 2 (UART or Clock-synchronized), 8-bit × 1(Clock-synchronized)
  • PWM: 8-bit × 1 (with 8-bit prescaler)
  • A/D converter: 10-bit × 16 channels (8-bit reading enabled)
  • D/A converter: 8-bit × 2 channels
  • LED direct drive port: 8
  • Clock generating circuit: Built-in 2 circuits (connect to external ceramicresonator or quartz-crystal oscillator)
  • Power source voltage
    • In high-speed mode
      • At 16.8 MHz oscillation frequency: 4.5 to 5.5 V
      • At 12.5 MHz oscillation frequency: 4.0 to 5.5 V
      • At 8.4 MHz oscillation frequency: 2.7 to 5.5 V
      • At 4.2 MHz oscillation frequency: 2.2 to 5.5 V (only Mask Rom Version)
      • At 2.1 MHz oscillation frequency: 2.0 to 5.5 V (only Mask Rom Version)
    • In middle-speed mode
      • At 16.8 MHz oscillation frequency: 4.5 to 5.5 V
      • At 12.5 MHz oscillation frequency: 2.7 to 5.5 V
      • At 8.4 MHz oscillation frequency: 2.2 to 5.5 V (only Mask Rom Version)
      • At 6.3 MHz oscillation frequency: 1.8 to 5.5 V (only Mask Rom Version)
    • In low-speed mode
      • At 32 kHz oscillation frequency: 1.8 to 5.5 V (for Flash Memory Version 2.7to 5.5 V)
  • Power dissipation
    • In low-speed mode
      • TBD μW (typ.) (at 32 kHz oscillation frequency, at 3 V power sourcevoltage) (Mask Rom Version)
      • TBD μW (typ.) (at 32 kHz oscillation frequency, at 3 V power sourcevoltage) (Flash Memory Version)
    • In high-speed mode
      • TBD mW (typ.) (at 16.8 MHz oscillation frequency, at 5 V power sourcevoltage) (Mask Rom Version)
      • TBD mW (typ.) (at 16.8 MHz oscillation frequency, at 5 V power sourcevoltage) (Flash Memory Version)
  • Operating temperature range: –20 to 85 degrees C
  • Packages
    • SP: PRDP0064BA-A (64P4B): 64-pin 750 mil SDIP
    • HP: PLQP0064KB-A (64P6Q-A): 64-pin 10 × 10 mm LQFP
    • KP: PLQP0064GA-A (64P6U-A): 64-pin 14 × 14 mm LQFP
    • WG: PTLG0064JA-A (64F0G): 64-pin 6 × 6 mm FLGA

Flash memory mode

  • Power source voltage: Vcc = 2.7 to 5.5 V
  • Program/Erase voltage: Vcc = 2.7 to 5.5 V
  • Programming method: Programming in unit of byte
  • Erasing method: Block erasing
  • Program/Erase control by software command
  • Number of times for programming/erasing: 100

Notes: The flash memory version cannot be used for applicationembedded in the MCU card.

 

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Hardware Design Support

Title Description
Characteristics data Information on observed values. Please use this as reference data when developing your set.
Reference oscillator circuit constants Oscillator circuit constants provided for reference by Murata Manufacturing, Kyocera and Nihon Dempa Kogyo.
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