R1RW0416DSB-0PR

4M High Speed SRAM (256-kword × 16-bit)

Recommended Product
R1RW0416DSB-0PR#S1
Production Status
Mass Production
Product Status: Mass Production(*)
PLP (Refer to Orderable Parts)

OVERVIEW

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

KEY FEATURES

    • Single 3.3 V supply: 3.3 V ± 0.3 V
    • Access time: 10 ns / 12 ns (max)
    • Completely static memory
      No clock or timing strobe required
    • Equal access and cycle times
    • Directly TTL compatible
      All inputs and outputs
    • Operating current: 145 / 130mA (max)
    • TTL standby current: 40 mA (max)
    • CMOS standby current
      : 5 mA (max)
      : 0.8 mA (max) (L-version)
      : 0.5 mA (max) (S-version)
    • Data retention current
      : 0.4 mA (max) (L-version)
      :0.2 mA (max) (S-version)
    • Data retention voltage: 2.0 V (min) (L-version , S-version)
    • Center VCC and VSS type pin out

PARAMETRICS

Parameters
R1RW0416DSB-0PR
Basic Information
Production Status
Mass Production(*)
PLP
PLP (Refer to Orderable Parts)
Memory capacity (Mbit)
4
Organization (Kword)
256
Organization (bit)
x 16
Package Type
TSOPII(44)
Access time (ns)
10
Supply voltage (V)
3.0 to 3.6
Operating temperature (°C)
0 to 70

Dimensions

Dimensions

You can find an explanation of orderable part numbers here .

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