The R1RW0408D is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.

Features

  • Data retention current: 0.4mA (max) (L-version)

Product Options

Orderable Part ID Part Status Pkg. Type Carrier Type Buy Sample
Active SOJ Tube
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
R1RW0408D Series Datasheet 日本語 Datasheet PDF 395 KB
R1RW0408D Series Datasheet PDF 143 KB
PCNs & PDNs
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 Product Change Notice PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 Product Change Notice PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 Product Change Notice PDF 1.46 MB
Other
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB