The R1RW0408DI is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting.
| Title | Other Languages | Type | Format | File Size | Date | |
|---|---|---|---|---|---|---|
| Datasheets & Errata | ||||||
| R1RW0408DI Series Datasheet | 日本語 | Datasheet | 355 KB | |||
| R1RW0408DI Series | – | Datasheet | 96 KB | |||
| PCNs & PDNs | ||||||
| Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) | 日本語 | Product Change Notice | 4.86 MB | |||
| Unification of a JEDEC tray and a embossed carrier tape for LQFP package | 日本語 | Product Change Notice | 3.74 MB | |||
| Unification of a JEDEC tray and a embossed carrier tape for LQFP package | 日本語 | Product Change Notice | 1.46 MB | |||
| Other | ||||||
| Renesas Semiconductor Lead-Free Packages | – | Brochure | 1.32 MB | |||
