The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features

  • Single 5.0 V supply: 5.0 V ± 10%
  • Access time: 12 ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 160 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max)
  • Center VCC and VSS type pin outTemperature range: −40 to +85°C

Product Options

Orderable Part ID Part Status Pkg. Type Carrier Type Buy Sample
R1RP0416DSB-2PI#D1
Active TSOP(2)
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
R1RP0416DI Series Datasheet 日本語 Datasheet PDF 455 KB
R1RP0416DI Series Datasheet PDF 112 KB
PCNs & PDNs
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 Product Change Notice PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 Product Change Notice PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 Product Change Notice PDF 1.46 MB
Other
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB