The R1RP0408DI Series is a 4-Mbit High-Speed static RAM organized 512-k word × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.

Features

  • Single 5.0 V supply: 5.0 V ± 10 %
  • Access time: 12 ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 130 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max)
  • Center VCC and VSS type pin out
  • Temperature range: −40 to +85°C

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
R1RP0408DGE-2PI#B1
Active SOJ Tube
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
R1RP0408DI Series Datasheet 日本語 Datasheet PDF 343 KB
PCNs & PDNs
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 Product Change Notice PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 Product Change Notice PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 Product Change Notice PDF 1.46 MB
Other
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB
Package Drawing SOJ 36pin PRSJ0036DA-A Package Outline Drawing PDF 21 KB