These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
NP89N055MUK-S18-AY
Package Info
 Active MP-25K Tube
Availability
Buy / Quote

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
NP89N055MUK, NP89N055NUKMOS FIELD EFFECT TRANSISTOR – Datasheet PDF 263 KB
User Guides & Manuals
Power Devices Part Number Guide – Guide PDF 1.89 MB
Other
PowerMOSFET & IPD – Brochure PDF 2.24 MB
info: For device-specific or order-specific documentation, submit a support request.