Overview

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 335 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 218 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models