Wide bandgap semiconductor technologies such as Gallium Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in different applications, from high power motor drives, fast charging adaptors, telecom, computing, to space applications. These devices feature lower Rds(on) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint.

Maximize power density and reliability with Renesas’ portfolio of GaN controllers and drivers for every power level suitable for a wide variety of applications. Log in to your MyRenesas account or register for one to receive new product notifications.

Gallium Nitride (GaN) is a highly efficient, high-performance wide bandgap semiconductor and is among the most promising emerging power technologies. GaN-based power devices significantly outperform traditional silicon devices with faster switching speeds, higher thermal conductivity and lower Rds(on).

Applications

Related Products

Part Number Description Datasheet Order
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Documentation

Title Type Date
PDF178 KB
Application Note
PDF3.51 MB日本語
Brochure
PDF3.16 MB
Brochure
PDF504 KB
Datasheet
PDF470 KB日本語
White Paper
PDF548 KB
White Paper

Related Boards & Kits

Videos

High-performance 80V Dual-phase Buck and Boost Controllers for GaN FETs

An overview of the industry’s first high-performance 80V dual-phase buck and boost controllers optimized to drive GaN FETs. With high efficiency, tight load regulation and current sharing, these devices deliver ideal power solutions for industrial automation, telecommunications, medical and automotive applications.