Wide bandgap semiconductor technologies such as Gallium Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in different applications, from high power motor drives, fast charging adaptors, telecom, computing, to space applications. These devices feature lower Rds(on) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint.
Maximize power density and reliability with Renesas’ portfolio of GaN controllers and drivers for every power level suitable for a wide variety of applications. Log in to your MyRenesas account or register for one to receive new product notifications.
Gallium Nitride (GaN) is a highly efficient, high-performance wide bandgap semiconductor and is among the most promising emerging power technologies. GaN-based power devices significantly outperform traditional silicon devices with faster switching speeds, higher thermal conductivity and lower Rds(on).
|RAA226110||Low-Side GaN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection||Buy Now|
|ISL81806||80V Dual Synchronous Buck Controller Optimized to Drive E-mode GaN FET||Buy Now|
|ISL81807||80V Dual or 2-Phase Synchronous Boost Controller Optimized to Drive E-mode GaN FET||Buy Now|
|ISL70020SEH||40V, 65A Enhancement Mode GaN Power Transistor||Buy Now|
|ISL70023SEH||100V, 60A Enhancement Mode GaN Power Transistor||Buy Now|
|ISL70024SEH||200V, 7.5A Enhancement Mode GaN Power Transistor||Buy Now|