ISL70444SEH

19MHz Radiation Hardened 40V Quad Rail-to-rail Input-output, Low-power Operational Amplifiers

OVERVIEW

The ISL70444SEH features four low-power amplifiers optimized to provide maximum dynamic range. These op amps feature a unique combination of rail-to-rail operation on the input and output as well as a slew enhanced front-end that provides ultra fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it’s periodic or momentary. It also offers low power, low offset voltage, and low temperature drift, making it ideal for applications requiring both high DC accuracy and AC performance. With <5μs recovery for Single Event Transients (SET) (LETTH = 86.4MeV•cm2 /mg), the number of filtering components needed is drastically reduced. The ISL70444SEH is also immune to single event latch-up because it is fabricated using the Renesas proprietary PR40 Silicon On Insulator (SOI) process.

The amplifiers are designed to operate over a single supply range of 2.7V to 40V or a split supply voltage range of ±1.35V to ±20V. Applications for these amplifiers include precision instrumentation, data acquisition, precision power supply controls, and process controls.

The ISL70444SEH is available in a 14 Ld hermetic ceramic flatpack and die forms that operate across the temperature range of -55°C to +125°C.

KEY FEATURES

  • Electrically screened to DLA SMD # 5962-13214
  • Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
  • <5μs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
  • Unity gain stable
  • Rail-to-rail input and output
  • Wide gain·bandwidth product: 19MHz
  • Wide single and dual supply range: 2.7V to 40V max
  • Low input offset voltage: 400μV
  • Low current consumption (per amplifier): 1.1mA, typ
  • No phase reversal with input overdrive
  • Slew rate
  • Large signal: 60V/μs
  • Operating temperature range: -55°C to +125°C
  • Radiation tolerance
  • High dose rate (50-300rad(Si)/s): 300krad(Si)
  • Low dose rate (0.01rad(Si)/s): 100krad(Si)*
  • SEB LETTH (VS = ±21V): 86.4MeV•cm2/mg
  • SEL immune (SOI Process) * Product capability established by initial characterization.

BLOCK DIAGRAM

 Block Diagram

PARAMETRICS

Parameters
ISL70444SEH
Basic Information
Production Status
Mass Production
# of Devices/ Channels
4
Bandwidth (MHz)
19
Slew Rate (V/μs)
60
VS (min)
2.7 V
VS (max)
40 V
IS (per amp)
2.4 mA
Noise VN (nV/√Hz)
11.3
IBIAS (max)
650 nA
Max Offset Voltage
0.4 mV
Low Dose Rate (ELDRS) krad (Si)
50
Qualification Level
QML Class V (space)
High Dose Rate (HDR) krad (Si)
100
DLA SMD
5962-13214
IOUT
10 mA
Rail-to-Rail Input
Yes
Rail-to-Rail Output
Yes
PSRR (dB)
70
Class
V, /PROTO
CMRR (dB)
88
SMD URL
AVOL (dB)
96
SEL (MeV/mg/cm2)
86.4
Temperature Range
-55 to +125

Confirm below disclaimers

Input Renesas account name and password