OVERVIEW
The ISL70417SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS
current and low temperature drift making them the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.
Applications for these amplifiers include precision active filters, medical and analytical instrumentation, precision power supply controls, and industrial controls.
The ISL70417SEH is offered in a 14 Ld hermetic ceramic flatpack package. The device is offered in an industry standard pin configuration and operates across the extended temperature range from -55°C to +125°C.
Applications for these amplifiers include precision active filters, medical and analytical instrumentation, precision power supply controls, and industrial controls.
The ISL70417SEH is offered in a 14 Ld hermetic ceramic flatpack package. The device is offered in an industry standard pin configuration and operates across the extended temperature range from -55°C to +125°C.
KEY FEATURES
- Electrically screened to DLA SMD# 5962-12228
- Low input offset voltage: ±110μV, maximum
- Superb offset temperature coefficient: 1μV/°C, maximum
- Input bias current: ±5nA, maximum
- Input bias current TC: ±5pA/°C, maximum
- Low current consumption: 440μA
- Voltage noise: 8nV/√Hz
- Wide supply range: 4.5V to 40V
- Operating temperature range: -55°C to +125°C
- Radiation environment
- SEB LETTH (VS = ±20V): 73.9MeV•cm2/mg
- Total dose, high dose rate: 300krad(Si)
- Total dose, low dose rate: 100krad(Si)*
- SEL immune (SOI process)
* Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
BLOCK DIAGRAM
PARAMETRICS
Parameters
ISL70417SEH
Basic Information
Production Status
Mass Production
# of Devices/ Channels
4
Bandwidth (MHz)
1.5
Slew Rate (V/μs)
0.5
VS (min)
4.5 V
VS (max)
40 V
IS (per amp)
0.44 mA
Noise VN (nV/√Hz)
8
IBIAS (max)
5 nA
Max Offset Voltage
0.11 mV
Low Dose Rate (ELDRS) krad (Si)
50
Qualification Level
QML Class V (space)
High Dose Rate (HDR) krad (Si)
300
DLA SMD
5962-12228
IOUT
43 mA
Rail-to-Rail Input
No
Rail-to-Rail Output
No
PSRR (dB)
120
Class
V, /PROTO
CMRR (dB)
120
SMD URL
AVOL (dB)
129
SEL (MeV/mg/cm2)
SEL free
Temperature Range
-55 to +125
