概览

简介

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

特性

  • N-channel 2.5V, P-channel 1.8V drive available
  • Low on-state resistance
    N-channel
    RDS(on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
    RDS(on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
    P-channel
    RDS(on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
    RDS(on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
    RDS(on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
  • Built-in gate protection diode
  • Lead-free and Halogen-free

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 314 KB
手册 PDF 8.73 MB
应用文档 PDF 648 KB 日文
3 items

设计和开发

模型