RJF0604JPD

60V, 5A Silicon N Channel Thermal FET Power Switching

Pin compatible with standard Power MOSFET package and built-in over temperature protection function for Body/Lighting/Heater applications, as well as powertrain applications and 24V battery system applications.

Product Status: Sample are available

OVERVIEW

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

KEY FEATURES

    • Logic level operation (4 V Gate drive).
    • Built-in the over temperature shut-down circuit.
    • High endurance capability against to the short circuit.
    • Latch type shut down operation (need 0 voltage recovery).
    • Built-in the current limitation circuit.
    • Power supply voltage applies 12 V and 24 V.
    • AEC-Q101 Compliant

PARAMETRICS

Parameters
RJF0604JPD
Basic Information
Nch/Pch
Nch
Number of channels
Single
Automotive
YES
VDSS (V)
60
ID (A)
5
RDS (ON) (mohm) max. @4V to 4.5V
100
RDS (ON) (ohm) typ. @4V to 4.5V
58
RDS (ON) (mohm) max. @8V to 10V
75
RDS (ON) (ohm) typ. @8V to 10V
42
Pch (W) .
30
Tsd (°C) typ.
175
Package Type.
DPAK(S)
Production Status
Sample are available

Outline

Dimensions

Below you will find information to support the development of your application.
You can find an explanation of orderable part numbers here.

 

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