Overview

Description

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.

Features

  • Electrically screened to DSCC SMD # 5962-01509
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
    • High Dose Rate: 300krad(SI) (Max)
    • Low Dose Rate: 50krad(SI) (Max)
    • SEL immune: Dielectrically isolated
    • SEU immune: 35MeV/mg/cm2
    • SEU cross-section at 89MeV/mg/cm2: 5x10-6cm2
  • Low start-up current: 100µA (Typ)
  • Fast propagation delay: 80ns (Typ)
  • Supply voltage range: 12V to 20V
  • High output drive: 1A (Peak, Typ)
  • Undervoltage lockout: 8.8V start (Typ), 8.2V stop (Typ)

Comparison

Applications

Applications

  • Current-mode switching power supplies
  • Control of high current FET drivers
  • Motor speed and direction control

Documentation

Design & Development

Models