RJP65T43DPQ-A0

IGBT 650V 30A TO-247A

Product Status: Mass Production

KEY FEATURES

    • Low collector to emitter saturation voltage
      VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
    • Trench gate and thin wafer technology (G7H series)
    • High speed switching
      tf = 45 ns typ. (at VCC = 400V, VGE = 15V, IC=20A, Rg = 10Ω, Ta = 25°C, Inductive load)
    • Operation frequency (20kHz ≤ f ˂ 100kHz)
      Rating of collector current IC = 30A (at Tc = 100°C)
    • Not guarantee short circuit withstand time

PARAMETRICS

Parameters
RJP65T43DPQ-A0
Basic Information
Production Status
Mass Production
PLP
-
Package Type.
TO-247A
Number of Channels
Single
Inverter
YES
PFC
YES
VCES (V)
650
Ic (Peak) (A)
150
IC (A) @25 °C
60
IC (A) @100 °C
30
VCE (sat) (V)
1.8
tf (µs) typ.
0.045
Pch (W)
150
Application
PFC
Mounting Type
Through Hole

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