The RBN75H65T1FPQ-A0 650V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.
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Pkg. Type |
Carrier Type |
Price (USD) | 1ku |
购买 / 样片 |
|
---|---|---|---|---|
器件号 | ||||
TO-247A | Tube | 4.555 | 获取样片, |