概览

简介

The RBA250N04AHPF-4UA01 is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high current switching applications.

特性

  • Super low on-state resistance
    • RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 12900pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 639 KB
应用文档 PDF 3.23 MB 日文
指南 PDF 1.71 MB
手册 PDF 2.24 MB
4 items

设计和开发

模型