The RBA250N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications.

特性

  • Super low on-state resistance
    • RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 12900pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

description文档

文档标题 language 类型 文档格式 文件大小 日期
star 40V – 250A – N-channel Power MOS FET Application : Automotive 数据手册 PDF 639 KB
Power Devices Part Number Guide 指南 PDF 2.00 MB
Power MOS FET APPLICATION NOTE 日本語 应用文档 PDF 814 KB
PowerMOSFET & IPD 手册 PDF 2.24 MB