The RBA250N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications.
- Super low on-state resistance
- RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 12900pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)