概要

説明

The IDT F1701, F1751, and F1763 are a pin-compatible series of RF to IF Single Channel Downconverting Mixers ideal for many Receiver (Rx) applications. These devices employ Zero-Distortion™ technology to practically eliminate the 3rd order intermodulation response.  These devices feature high gain (~12 dB) and low noise figure in addition to outstanding Output IP3 (> +40 dBm)

特長

  • Single Mixer Ideal for Multi-Carrier Systems
  • 3 versions cover 700 - 2700 MHz
  • Lowside or Highside LO
  • 11.8dB Gain
  • Ultra linear +43dBm IP3O using HS LO or +37.5 dBm IP3O using LSLO
  • 9.7dB NF
  • 200 Ω output impedance
  • Wide flat-performance IF BW
  • Drives ADC directly for DPD applications
  • Low Power Consumption
  • 5x5 20 pin package
  • Standby Mode

製品比較

アプリケーション

ドキュメント

分類 タイトル 日付
データシート PDF 1.21 MB
ガイド PDF 2.24 MB
製品概要 PDF 1.12 MB
製品変更通知 PDF 45 KB
4 items

設計・開発

Available Modular Designs by X-Microwave:
XM-A7E7-0604D Mixer

モデル

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.