概要

The RJP65T43DPM 650V, 40A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 20A, Rg = 10Ω, Ta = 25 °C, Inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz)
  • Not guarantee short circuit withstand time

アプリケーション

High speed switching

ドキュメント

設計・開発

ECADモデル

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ECADモデルを調べる
Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    ご購入 / サンプル
    型名
    RJP65T43DPM-00#T1
    circleアクティブ
    memory
    view_in_ar
    サンプル入手可能
    		 TO-3PFM Tube サンプルを入手,
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