Overview

Description

The RBA160N04AHPF-4UA01 is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high current switching applications.

Features

  • Super low on-state resistance
    • RDS(on) = 1.25 mΩ MAX. (VGS = 10 V, ID = 80A)
  • Low input capacitance
    • Ciss = 8800pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 413 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Brochure PDF 2.24 MB
4 items

Design & Development

Models