Overview

Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
  • High current rating: ID(DC) = ∓100 A

Documentation

Title Type Date
PDF1.32 MB
Datasheet
PDF3.23 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF1.71 MB
Guide
PDF224 KB
Product Reliability Report

Design & Development

Models

Models

Title Type Date
Model - SPICE

Support