Overview

Description

Support is limited to customers who have already adopted these products.

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

Features

  • Single supply: 2.7 to 5.5 V
  • Access time: 85 ns (max)/100 ns (max) at 4.5 V ≤ VCC < 5.5 V 120 ns (max) at 2.7 V ≤ VCC ≤ 5.5 V
  • Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 μW (max)
  • On-chip latches: address, data, CE, OE, WE
  • Automatic byte write: 10 ms (max)
  • Automatic page write (64 bytes): 10 ms (max)
  • Ready/Busy (only the R1EV58256BxxR series)
  • Data polling and Toggle bit
  • Data protection circuit on power on/off
  • Conforms to JEDEC byte-wide standard
  • Reliable CMOS with MONOS cell technology
  • 10⁵ or more erase/write cycles
  • 10 or more years data retention
  • Software data protection
  • Write protection by RES pin (only the R1EV58256BxxR series)
  • Temperature range: -40 to 85°C
  • There are lead free products.

Comparison

Applications

Documentation

Design & Development

Models