Overview

Description

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

Features

  • Utilizing advanced pMTJ STT-MRAM technology
  • High-speed Quad SPI interface, up to 108MHz SDR mode
  • Low active write and read current
  • Independent 256-byte user programmable and lockable NVM
  • Industrial plus operating temperature: -40°C to +105°C
  • Supply voltage: 1.8V
  • Package: 8-pin SOIC and 8-pad DFN (WSON)
     

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.00 MB
End Of Life Notice PDF 1.08 MB
Product Advisory PDF 315 KB
Overview PDF 1.26 MB
Product Advisory PDF 201 KB
Application Note PDF 98 KB
6 items

Design & Development

Boards & Kits

Boards & Kits

Models

High Performance Serial and Parallel MRAM Memory Family

Renesas’ high performance serial and parallel MRAM memory family provides the largest range of SPI and parallel interface non-volatile memory sizes, with fast read and write speeds. The MRAM family is ideal for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.