Overview

Description

The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)
  • Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 223 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 223 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models