Overview

Description

60 V – 90 A – N-channel Power MOS FET

Features

  • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 435 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 226 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models