Overview

The NP90N04MDH, NP90N04NDH, NP90N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP90N04MDH, NP90N04NDH RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = 4.5 V, ID = 45 A) NP90N04PDH RDS(on)1 = 3.4 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 6.0 mΩ MAX. (VGS = 4.5 V, ID = 45 A)
  • High avalanche energy, High avalanche current
  • Logic level drive Type
  • Low input capacitance Ciss = 7500 pF TYP. (VDS = 25 V)

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP90N04MDH, NP90N04NDH, NP90N04PDH Datasheet
PDF 355 KB
Guide
Power Devices Part Number Guide
PDF 1.71 MB
Brochure
Power MOSFET & IPD
PDF 2.24 MB
3 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Product Options

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    NP90N04MDH
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