Overview

Description

Support is limited to customers who have already adopted these products.

The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Logic level
  • Built-in gate protection diode
  • Super low on-state resistance NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
  • High current rating ID(DC) = ±80 A
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 348 KB
Guide PDF 1.71 MB
Brochure PDF 2.24 MB
3 items

Design & Development

Models