Overview

Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A)
  • Low Ciss : Ciss = 2000 pF TYP.
  • Built-in gate protection diode

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 290 KB
Guide PDF 1.71 MB
Brochure PDF 2.24 MB
3 items

Design & Development

Models