Overview

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP34N055HHE,NP34N055IHE,NP34N055SHE Data Sheet
PDF 288 KB
Guide
Power Devices Part Number Guide
PDF 1.71 MB
Brochure
Power MOSFET & IPD
PDF 2.24 MB
3 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

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    Part Number
    NP34N055SHE
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