Overview

Description

The NP100N055MUH, NP100N055NUH, NP100N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP100N055MUH, NP100N055NUH RDS(on) = 4.9 mΩ MAX. (VGS = 10 V, ID = 50 A) NP100N055PUH RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • High avalanche energy, High avalanche current
  • Low input capacitance Ciss = 7000 pF TYP. (VDS = 25 V)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 430 KB
Guide PDF 1.71 MB
Brochure PDF 2.24 MB
3 items

Design & Development

Models