Overview

Description

The F1420 is a high-gain/high-linearity RF amplifier used in high-performance RF applications. The F1420 provides 17.4dB gain with +42dBm OIP3 and 4.5dB noise figure at 960MHz, and uses a single 5V supply and 105mA of ICC. The F1420 is packaged in a 4 x 4 mm 24-QFN with 50Ω RF input and RF output impedances for ease of integration into the signal-path.
 

Features

  • Broadband 700MHz to 1.1GHz  
  • 17.4dB typical gain at 960MHz 
  • 4.5dB noise figure at 960MHz
  • +42dBm OIP3 at 960MHz 
  • +23.2dBm output P1dB at 960MHz
  • Single 5V supply voltage 
  • ICC = 105mA
  • -40°C to +105°C operating temperature 
  • 50Ω single-ended input/output impedances 
  • Standby mode for power savings
  • 4  x 4 mm 24-QFN package

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 2.11 MB
Guide PDF 2.24 MB
Product Change Notice PDF 493 KB
Product Brief PDF 983 KB
Product Change Notice PDF 5.71 MB
Product Change Notice PDF 5.61 MB
Product Change Notice PDF 24 KB
7 items

Design & Development

Boards & Kits

Boards & Kits

Models

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.