The RJP65S03DWA 650V, 30A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in an Unsawn wafer package type.
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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