The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Super low on-state resistance RDS(on) = 2.95 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

description文档

文档标题 language 类型 文档格式 文件大小 日期
star NP89N04PDK40 V - 90 A - N-channel Power MOS FETApplication: Automotive 数据手册 PDF 266 KB
Power Devices Part Number Guide 指南 PDF 2.00 MB
Power MOS FET APPLICATION NOTE 日本語 应用文档 PDF 814 KB
PowerMOSFET & IPD 手册 PDF 2.24 MB