Renesas offers the next generation magnetoresistive random-access memory (MRAM) by utilizing a proprietary technology called perpendicular Magnetic-Tunnel-Junction STT (Spin-transfer Torque) to achieve best-in-class non-volatile memory with long data retention and fast serial and parallel interfaces. With a wide range of memory densities and high operating temperatures, Renesas’ MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.

Renesas MRAM product offerings include:

  • High memory density
    • SPI 4Mb to 16Mb
    • Parallel 4Mb to 32Mb
  • Low active write and read currents
  • Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, and parallel up to 108MHz
  • Low operating power from 1.71V to 3.6V (SPI interface) and 2.7V to 3.6V (parallel interface)
  • Operating temperature from -40 °C to 105 °C

About MRAM Memory

An MRAM is a type of memory that stores data within cells of magnetic elements. Two ferromagnetic plates separated by a thin insulator hold a magnetization. One plate is a permanent magnet set to a particular polarity. The second plate’s magnetization is changed with an external field. During programming, this field can produce a low or high resistance state, respectively representing “0” or “1” in data storage.

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その他資料
One-Renesas Memory Solutions Brochure カタログ PDF 4.25 MB
MRAM Family Overview 概要 PDF 1.26 MB