NP16N06YLL

60 V – 16 A – N-channel Power MOS FET

Product Status: Mass Production(*)

OVERVIEW

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

KEY FEATURES

    • Low on-state resistance
      RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
    • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
    • Logic level drive type
    • Gate to Source ESD protection diode built in
    • Designed for automotive application and AEC-Q101 qualified

PARAMETRICS

Parameters
NP16N06YLL
Basic Information
Production Status
Mass Production(*)
PLP
-
Package Type
HSON-8
Nch/Pch
Nch
Number of Channels
Single
VDSS (V) max.
60
ID (A)
16
RDS (ON) (mohm) max. @4V or 4.5V
55
RDS (ON) (mohm) max. @10V or 8V
35
Ciss (pF) typ.
400
Vgs (off) (V) max.
2
VGSS (V)
20
Pch (W)
27.3
Application
Automotive Use
Mounting Type
Surface Mount
Series Name
NP Series
QG (nC) typ.
12

You can find an explanation of orderable part numbers here.

 

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